High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
Abstract Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN underlying layer is grown by limited growth tempe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-02-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-29150-6 |