Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region

Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region

This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET. The dual ferroelectric region with FE1 region and FE2 region forms a non-uniform voltage amplification effec...

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Bibliographic Details
Main Authors: Jia-Fei Yao, Xue Han, Xin-Peng Zhang, Jin-Cheng Liu, Ming-Yuan Gu, Mao-Lin Zhang, Ke-Han Yu, Yu-Feng Guo
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Crystals
Subjects:
NCFET
dual ferroelectric region
ferroelectric parameters
subthreshold swing
Online Access:https://www.mdpi.com/2073-4352/12/11/1545

Internet

https://www.mdpi.com/2073-4352/12/11/1545

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