Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices
Abstract Because spin‐orbit coupling in wurtzite semiconductors is relatively weak compared with that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high‐performance optical semiconductor spintronic devices such as spin lasers. For the purpose of reducing the opera...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300045 |