High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator
We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibility, and simple cost-effective fabrication. We mad...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5027276 |