Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric
An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in...
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| Format: | Article |
| Language: | English |
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AIMS Press
2023-10-01
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| Series: | AIMS Electronics and Electrical Engineering |
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| Online Access: | https://www.aimspress.com/article/doi/10.3934/electreng.2023017?viewType=HTML |