Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Hf<i><sub>x</sub></i>Zr<sub>1−<i>x</i></sub>O<sub>2</sub> (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered...

Full description

Bibliographic Details
Main Authors: Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo, Hee-Chul Lee
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Nanomaterials
Subjects:
HZO
PEALD
ferroelectric memory
deposition temperature
film density
remanent polarization
Online Access:https://www.mdpi.com/2079-4991/12/3/548

Internet

https://www.mdpi.com/2079-4991/12/3/548

Similar Items