Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Effect of Process Temperature on Density and Electrical Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Hf<i><sub>x</sub></i>Zr<sub>1−<i>x</i></sub>O<sub>2</sub> (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered...

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Bibliographic Details
Main Authors:	Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo, Hee-Chul Lee
Format:	Article
Language:	English
Published:	MDPI AG 2022-02-01
Series:	Nanomaterials
Subjects:	HZO PEALD ferroelectric memory deposition temperature film density remanent polarization
Online Access:	https://www.mdpi.com/2079-4991/12/3/548

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