Adaptive Residual Useful Life Prediction for the Insulated-Gate Bipolar Transistors with Pulse-Width Modulation Based on Multiple Modes and Transfer Learning

Adaptive Residual Useful Life Prediction for the Insulated-Gate Bipolar Transistors with Pulse-Width Modulation Based on Multiple Modes and Transfer Learning

Currently, residual useful life (RUL) prediction models for insulated-gate bipolar transistors (IGBT) do not focus on the multi-modal characteristics caused by the pulse-width modulation (PWM). To fill this gap, the Markovian stochastic process is proposed to model the mode transition process, due t...

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Bibliographic Details
Main Authors: Wujin Deng, Yan Gao, Wanqing Song, Enrico Zio, Gaojian Li, Jin Liu, Aleksey Kudreyko
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Fractal and Fractional
Subjects:
fractional Weibull motion
multi-sensor fusion
multi-modal characteristics
Markovian mode transition stochastic process
transfer learning
pulse-width modulation
Online Access:https://www.mdpi.com/2504-3110/7/8/614

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https://www.mdpi.com/2504-3110/7/8/614

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