Adaptive Residual Useful Life Prediction for the Insulated-Gate Bipolar Transistors with Pulse-Width Modulation Based on Multiple Modes and Transfer Learning
Currently, residual useful life (RUL) prediction models for insulated-gate bipolar transistors (IGBT) do not focus on the multi-modal characteristics caused by the pulse-width modulation (PWM). To fill this gap, the Markovian stochastic process is proposed to model the mode transition process, due t...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-08-01
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Series: | Fractal and Fractional |
Subjects: | |
Online Access: | https://www.mdpi.com/2504-3110/7/8/614 |