Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption

Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption

We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (<i>SS</i>) (~80 mV/dec) and a high on/off current ratio (~10<sup>7</s...

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Bibliographic Details
Main Authors: Wonyeong Choi, Bo Jin, Seonghwan Shin, Jeonghyeon Do, Jongmin Son, Kihyun Kim, Jeong-Soo Lee
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Biosensors
Subjects:
biologically active field-effect transistor
electrolyte-gated transistor
high sensitivity
low power consumption
urea detection
Online Access:https://www.mdpi.com/2079-6374/13/5/565

Internet

https://www.mdpi.com/2079-6374/13/5/565

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