Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film
This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO<sub>4</sub> (a-IGZO) channel layer. TFTs with single-layer Ta<sub>2</sub>O<sub>5</sub> and dual-layer Ta<sub>2</sub>O<sub>5</sub&g...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-10-01
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| Series: | Metals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2075-4701/12/10/1663 |