Characteristics investigation on 4.5kV IGBT with partially narrow mesa and split-gate
Low on-state voltage and low turn-off loss are key issues for IGBT used in HVDC and FACTS. Partial narrow mesa was introduced to improve emitter side contact resistance of IGBT based on Nakagawa limit assumption. However, turn-off loss increases and short circuit sustainability get worse. Split gate...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2021-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/76/e3sconf_icepese2021_01012.pdf |