Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)

Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)

This article proposes a novel magnetoelectric (ME) effect-based ternary content addressable memory (TCAM). The potential array-level write and search performances of the proposed ME-TCAM are studied using experimentally calibrated compact physical models and SPICE simulations. The voltage-controlled...

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Bibliographic Details
Main Authors: Siri Narla, Piyush Kumar, Ann Franchesca Laguna, Dayane Reis, X. Sharon Sharon, Michael Niemier, Azad Naeemi
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
BiFeO₃ (BFO)
magnetoelectric (ME)
ME-magnetic random access memory (MRAM)
memory-augmented neural network (MANN)
micromagnetic
multiferroic
Online Access:https://ieeexplore.ieee.org/document/9792464/

Internet

https://ieeexplore.ieee.org/document/9792464/

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