High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer. The devices gate length, gate/drain spacing and dielectric thickness are 100 nm, 2 μm, and 10 nm...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2023-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2023.2219687 |