HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si
Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma act...
| Hlavní autoři: | , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
Elsevier
2020-03-01
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| Edice: | Results in Physics |
| Témata: | |
| On-line přístup: | http://www.sciencedirect.com/science/article/pii/S2211379719334503 |