HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si
Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma act...
| Հիմնական հեղինակներ: | , , , |
|---|---|
| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
Elsevier
2020-03-01
|
| Շարք: | Results in Physics |
| Խորագրեր: | |
| Առցանց հասանելիություն: | http://www.sciencedirect.com/science/article/pii/S2211379719334503 |