Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells
The ferroelectric field-effect transistor (FeFET) is one of the most promising candidates for emerging nonvolatile memory devices owing to its low write energy and high <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ </tex-math></inline...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9535498/ |