Marked Efficiency Improvement of FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

Marked Efficiency Improvement of FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

Highly luminescent FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and s...

Full description

Bibliographic Details
Main Authors: Lufeng Hu, Zhixiang Ye, Dan Wu, Zhaojin Wang, Weigao Wang, Kai Wang, Xiangqian Cui, Ning Wang, Hongyu An, Bobo Li, Bingxi Xiang, Mingxia Qiu
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
perovskite light-emitting diode
FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> film
double hole transport structure
light-emitting layer thickness
Online Access:https://www.mdpi.com/2079-4991/12/9/1454

Internet

https://www.mdpi.com/2079-4991/12/9/1454

Similar Items