Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes

Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer...

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Bibliographic Details
Main Authors: Liubing Wang, Fujun Xu, Jing Lang, Jiaming Wang, Lisheng Zhang, Xueqi Guo, Chen Ji, Xiangning Kang, Xuelin Yang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
AlGaN
deep-ultraviolet light-emitting diode
light extraction efficiency
transparent p-type layer
reflective electrode
Online Access:https://ieeexplore.ieee.org/document/10056129/

Internet

https://ieeexplore.ieee.org/document/10056129/

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