Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes
Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10056129/ |
| _version_ | 1797870668100927488 |
|---|---|
| author | Liubing Wang Fujun Xu Jing Lang Jiaming Wang Lisheng Zhang Xueqi Guo Chen Ji Xiangning Kang Xuelin Yang Xinqiang Wang Zhixin Qin Weikun Ge Bo Shen |
| author_facet | Liubing Wang Fujun Xu Jing Lang Jiaming Wang Lisheng Zhang Xueqi Guo Chen Ji Xiangning Kang Xuelin Yang Xinqiang Wang Zhixin Qin Weikun Ge Bo Shen |
| author_sort | Liubing Wang |
| collection | DOAJ |
| description | Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer can reduce the light absorption and the Ni/Au/Al electrodes achieve high reflectivity and Ohmic contact to ensure the enhancement of the light extraction and maintain fine electrical properties. By this approach, the maximum external quantum efficiency of the DUV-LEDs with optimized Ni/Au/Al reflective electrodes is increased by 40%, compared to that with conventional Ni/Au electrodes over the whole current range. |
| first_indexed | 2024-04-10T00:32:08Z |
| format | Article |
| id | doaj.art-770b5e61d864403a93f99d0622c83d7a |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-04-10T00:32:08Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-770b5e61d864403a93f99d0622c83d7a2023-03-14T23:00:08ZengIEEEIEEE Photonics Journal1943-06552023-01-011521510.1109/JPHOT.2023.325043310056129Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity ElectrodesLiubing Wang0Fujun Xu1https://orcid.org/0000-0002-0751-6566Jing Lang2Jiaming Wang3Lisheng Zhang4Xueqi Guo5Chen Ji6Xiangning Kang7Xuelin Yang8Xinqiang Wang9https://orcid.org/0000-0001-5514-8588Zhixin Qin10Weikun Ge11Bo Shen12State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaImproving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer can reduce the light absorption and the Ni/Au/Al electrodes achieve high reflectivity and Ohmic contact to ensure the enhancement of the light extraction and maintain fine electrical properties. By this approach, the maximum external quantum efficiency of the DUV-LEDs with optimized Ni/Au/Al reflective electrodes is increased by 40%, compared to that with conventional Ni/Au electrodes over the whole current range.https://ieeexplore.ieee.org/document/10056129/AlGaNdeep-ultraviolet light-emitting diodelight extraction efficiencytransparent p-type layerreflective electrode |
| spellingShingle | Liubing Wang Fujun Xu Jing Lang Jiaming Wang Lisheng Zhang Xueqi Guo Chen Ji Xiangning Kang Xuelin Yang Xinqiang Wang Zhixin Qin Weikun Ge Bo Shen Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes IEEE Photonics Journal AlGaN deep-ultraviolet light-emitting diode light extraction efficiency transparent p-type layer reflective electrode |
| title | Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes |
| title_full | Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes |
| title_fullStr | Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes |
| title_full_unstemmed | Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes |
| title_short | Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes |
| title_sort | improving light extraction efficiency of algan based deep ultraviolet light emitting diodes by combining thinning p algan x002f p gan layer with ni x002f au x002f al high reflectivity electrodes |
| topic | AlGaN deep-ultraviolet light-emitting diode light extraction efficiency transparent p-type layer reflective electrode |
| url | https://ieeexplore.ieee.org/document/10056129/ |
| work_keys_str_mv | AT liubingwang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT fujunxu improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT jinglang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT jiamingwang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT lishengzhang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT xueqiguo improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT chenji improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT xiangningkang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT xuelinyang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT xinqiangwang improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT zhixinqin improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT weikunge improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes AT boshen improvinglightextractionefficiencyofalganbaseddeepultravioletlightemittingdiodesbycombiningthinningpalganx002fpganlayerwithnix002faux002falhighreflectivityelectrodes |