Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt
In this paper, a method of extracting the junction temperature based on the turn-on current switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dIDS/dt is analyzed theoretically, and experimentally...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-07-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1073/11/8/1951 |