Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Voltage-controlled magnetic random-access memory is promising for high-performance computing applications. Here, a perpendicular magnetic tunnel junction structure with high voltage-controlled magnetic anisotropy coefficient is developed, allowing sub-volt and sub-nanosecond precessional switching.
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-022-00310-x |