Probing the Electronic and Opto-Electronic Properties of Multilayer MoS<sub>2</sub> Field-Effect Transistors at Low Temperatures

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS<sub>2</sub> Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application o...

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Bibliographic Details
Main Authors: Sujoy Ghosh, Jie Zhang, Milinda Wasala, Prasanna Patil, Nihar Pradhan, Saikat Talapatra
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Nanomaterials
Subjects:
2D materials
field effect transistors
opto-electronic transport
photodetector
Online Access:https://www.mdpi.com/2079-4991/13/16/2333

Internet

https://www.mdpi.com/2079-4991/13/16/2333

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