EFFECT OF PROCESS PARAMETER VARIATION ON ft IN CONVENTIONAL AND JUNCTIONLESS GATE-ALL-AROUND DEVICES
In this paper we have studied the effect of process variations on unity gain cut- off frequency (ft) in conventional and junctionless gate-all-around (GAA) transistors using TCAD simulations. Three different geometrical parameters, channel doping, source/drain doping (for conventional GAA), wire dop...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor's University
2015-08-01
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| Series: | Journal of Engineering Science and Technology |
| Subjects: | |
| Online Access: | http://jestec.taylors.edu.my/Vol%2010%20Issue%208%20August%202015/Volume%20(10)%20Issue%20(8)%20994-1008.pdf |