Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Abstract Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resulting device, the source‐gated transistor (SGT), is limite...

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Bibliographic Details
Main Authors: Eva Bestelink, Hao‐Jing Teng, Ute Zschieschang, Hagen Klauk, Radu A. Sporea
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
contact effects
organic semiconductors
source‐gated transistors
temperature effects
thin‐film transistors
Online Access:https://doi.org/10.1002/aelm.202201163

Internet

https://doi.org/10.1002/aelm.202201163

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