Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay
Abstract Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resulting device, the source‐gated transistor (SGT), is limite...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201163 |