Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors
We present a comprehensive analysis of practical p-n-p Ge/Ge<sub>1-x</sub>Sn<sub>x</sub>/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection. Our design includes a Ge<sub>1-x</sub>Sn<sub>x</sub> narrow-ban...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8554067/ |