A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss. An N type base region under the trench dummy gate provides a low barrier path to suppress hole injection during the r...

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Bibliographic Details
Main Authors: Hao Wu, Xuan Li, Xiaochuan Deng, Yangyang Wu, Jiawei Ding, Wensong Peng, Bo Zhang
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Micromachines
Subjects:
SiC trench MOSFET
bipolar degradation
integrated unipolar diode
low switching loss
Online Access:https://www.mdpi.com/2072-666X/15/1/92

Internet

https://www.mdpi.com/2072-666X/15/1/92

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