Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature
Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-04-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/5/681 |
_version_ | 1797497776420945920 |
---|---|
author | Xin Cao Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li |
author_facet | Xin Cao Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li |
author_sort | Xin Cao |
collection | DOAJ |
description | Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup>−1</sup>) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future. |
first_indexed | 2024-03-10T03:24:06Z |
format | Article |
id | doaj.art-784d56e22dd348e8b190483fd86e894a |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-10T03:24:06Z |
publishDate | 2022-04-01 |
publisher | MDPI AG |
record_format | Article |
series | Micromachines |
spelling | doaj.art-784d56e22dd348e8b190483fd86e894a2023-11-23T12:11:30ZengMDPI AGMicromachines2072-666X2022-04-0113568110.3390/mi13050681Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low TemperatureXin Cao0Kunpeng Zhang1Guang Feng2Quan Wang3Peihong Fu4Fengping Li5College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035, ChinaZhejiang Provincial Engineering Center of Laser and Optoelectronic Intelligent Manufacturing, Wenzhou University, Wenzhou 325035, ChinaZhejiang Provincial Engineering Center of Laser and Optoelectronic Intelligent Manufacturing, Wenzhou University, Wenzhou 325035, ChinaCollege of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035, ChinaFlexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human–machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa<sup>−1</sup>) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.https://www.mdpi.com/2072-666X/13/5/681flexiblepressurevertical graphene (VG)sensor |
spellingShingle | Xin Cao Kunpeng Zhang Guang Feng Quan Wang Peihong Fu Fengping Li Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature Micromachines flexible pressure vertical graphene (VG) sensor |
title | Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature |
title_full | Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature |
title_fullStr | Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature |
title_full_unstemmed | Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature |
title_short | Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature |
title_sort | preparation of a vertical graphene based pressure sensor using pecvd at a low temperature |
topic | flexible pressure vertical graphene (VG) sensor |
url | https://www.mdpi.com/2072-666X/13/5/681 |
work_keys_str_mv | AT xincao preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature AT kunpengzhang preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature AT guangfeng preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature AT quanwang preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature AT peihongfu preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature AT fengpingli preparationofaverticalgraphenebasedpressuresensorusingpecvdatalowtemperature |