Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering
We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen co...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-12-01
|
| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023103653 |