Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering

Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering

We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen co...

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Bibliographic Details
Main Authors: Hye Jin Lee, Jeong-Hyeon Kim, Jongyun Choi, Yoon Seok Kim, Sung-Nam Lee
Format: Article
Language:English
Published: Elsevier 2023-12-01
Series:Heliyon
Subjects:
Ga2O3
Memristor
Capacitance
Oxygen vacancy
RF sputter
Online Access:http://www.sciencedirect.com/science/article/pii/S2405844023103653

Internet

http://www.sciencedirect.com/science/article/pii/S2405844023103653

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