Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering
We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen co...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-12-01
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| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023103653 |
| _version_ | 1797383874484895744 |
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| author | Hye Jin Lee Jeong-Hyeon Kim Jongyun Choi Yoon Seok Kim Sung-Nam Lee |
| author_facet | Hye Jin Lee Jeong-Hyeon Kim Jongyun Choi Yoon Seok Kim Sung-Nam Lee |
| author_sort | Hye Jin Lee |
| collection | DOAJ |
| description | We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen concentration. In the low-resistance state (LRS), capacitance increased by over 60 times compared to the high-resistance state (HRS). Furthermore, in the HRS state, increasing the oxygen flow from 0 to 0.3 sccm resulted in an 80 % decrease in capacitance, while in the LRS state, capacitance increased by 128 %. These results indicate that RS-dependent capacitance in Ga2O3 memristors is influenced by the density of oxygen vacancies. The presence of oxygen vacancies affects charge storage capacity and capacitance, with higher oxygen concentrations leading to reduced capacitance in HRS and increased capacitance in LRS. The results contribute to the understanding of the capacitance behavior in Ga2O3 memristors and highlight the significance of oxygen vacancies in their operation. |
| first_indexed | 2024-03-08T21:27:17Z |
| format | Article |
| id | doaj.art-7857404bf8354c24a0c5ee69bc67994e |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-03-08T21:27:17Z |
| publishDate | 2023-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-7857404bf8354c24a0c5ee69bc67994e2023-12-21T07:35:51ZengElsevierHeliyon2405-84402023-12-01912e23157Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputteringHye Jin Lee0Jeong-Hyeon Kim1Jongyun Choi2Yoon Seok Kim3Sung-Nam Lee4Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung, 15073, Republic of KoreaDepartment of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung, 15073, Republic of KoreaDepartment of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung, 15073, Republic of KoreaDepartment of Nano & Semiconductor Engineering, Tech University of Korea, Siheung, 15073, Republic of KoreaDepartment of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung, 15073, Republic of Korea; Department of Nano & Semiconductor Engineering, Tech University of Korea, Siheung, 15073, Republic of Korea; Corresponding author. Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung, 15073, Republic of Korea.We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen concentration. In the low-resistance state (LRS), capacitance increased by over 60 times compared to the high-resistance state (HRS). Furthermore, in the HRS state, increasing the oxygen flow from 0 to 0.3 sccm resulted in an 80 % decrease in capacitance, while in the LRS state, capacitance increased by 128 %. These results indicate that RS-dependent capacitance in Ga2O3 memristors is influenced by the density of oxygen vacancies. The presence of oxygen vacancies affects charge storage capacity and capacitance, with higher oxygen concentrations leading to reduced capacitance in HRS and increased capacitance in LRS. The results contribute to the understanding of the capacitance behavior in Ga2O3 memristors and highlight the significance of oxygen vacancies in their operation.http://www.sciencedirect.com/science/article/pii/S2405844023103653Ga2O3MemristorCapacitanceOxygen vacancyRF sputter |
| spellingShingle | Hye Jin Lee Jeong-Hyeon Kim Jongyun Choi Yoon Seok Kim Sung-Nam Lee Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering Heliyon Ga2O3 Memristor Capacitance Oxygen vacancy RF sputter |
| title | Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering |
| title_full | Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering |
| title_fullStr | Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering |
| title_full_unstemmed | Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering |
| title_short | Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering |
| title_sort | correlation between oxygen flow controlled resistive switching and capacitance behavior in gallium oxide memristors grown via rf sputtering |
| topic | Ga2O3 Memristor Capacitance Oxygen vacancy RF sputter |
| url | http://www.sciencedirect.com/science/article/pii/S2405844023103653 |
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