Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering
We studied on the bipolar resistive switching (RS)-dependent capacitance of Ga2O3 memristors, grown using controlled oxygen flow via a radio frequency sputtering process. The Ag/Ga2O3/Pt memristor structure was employed to investigate the capacitance changes associated with RS behavior and oxygen co...
Main Authors: | Hye Jin Lee, Jeong-Hyeon Kim, Jongyun Choi, Yoon Seok Kim, Sung-Nam Lee |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-12-01
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Series: | Heliyon |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023103653 |
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