Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy

Abstract Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to addr...

Full description

Bibliographic Details
Main Authors: Yaolong Li, Pengzuo Jiang, Xiaying Lyu, Xiaofang Li, Huixin Qi, Jinglin Tang, Zhaohang Xue, Hong Yang, Guowei Lu, Quan Sun, Xiaoyong Hu, Yunan Gao, Qihuang Gong
Format: Article
Language:English
Published: Nature Portfolio 2023-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-40603-4
_version_ 1797558527442550784
author Yaolong Li
Pengzuo Jiang
Xiaying Lyu
Xiaofang Li
Huixin Qi
Jinglin Tang
Zhaohang Xue
Hong Yang
Guowei Lu
Quan Sun
Xiaoyong Hu
Yunan Gao
Qihuang Gong
author_facet Yaolong Li
Pengzuo Jiang
Xiaying Lyu
Xiaofang Li
Huixin Qi
Jinglin Tang
Zhaohang Xue
Hong Yang
Guowei Lu
Quan Sun
Xiaoyong Hu
Yunan Gao
Qihuang Gong
author_sort Yaolong Li
collection DOAJ
description Abstract Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters.
first_indexed 2024-03-10T17:31:40Z
format Article
id doaj.art-785a1b1e28d84900bf656f00006d5f9e
institution Directory Open Access Journal
issn 2041-1723
language English
last_indexed 2024-03-10T17:31:40Z
publishDate 2023-08-01
publisher Nature Portfolio
record_format Article
series Nature Communications
spelling doaj.art-785a1b1e28d84900bf656f00006d5f9e2023-11-20T09:59:08ZengNature PortfolioNature Communications2041-17232023-08-011411710.1038/s41467-023-40603-4Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopyYaolong Li0Pengzuo Jiang1Xiaying Lyu2Xiaofang Li3Huixin Qi4Jinglin Tang5Zhaohang Xue6Hong Yang7Guowei Lu8Quan Sun9Xiaoyong Hu10Yunan Gao11Qihuang Gong12State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityPeking University Yangtze Delta Institute of OptoelectronicsState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityState Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking UniversityAbstract Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters.https://doi.org/10.1038/s41467-023-40603-4
spellingShingle Yaolong Li
Pengzuo Jiang
Xiaying Lyu
Xiaofang Li
Huixin Qi
Jinglin Tang
Zhaohang Xue
Hong Yang
Guowei Lu
Quan Sun
Xiaoyong Hu
Yunan Gao
Qihuang Gong
Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
Nature Communications
title Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_full Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_fullStr Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_full_unstemmed Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_short Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy
title_sort revealing low loss dielectric near field modes of hexagonal boron nitride by photoemission electron microscopy
url https://doi.org/10.1038/s41467-023-40603-4
work_keys_str_mv AT yaolongli revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT pengzuojiang revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT xiayinglyu revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT xiaofangli revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT huixinqi revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT jinglintang revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT zhaohangxue revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT hongyang revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT guoweilu revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT quansun revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT xiaoyonghu revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT yunangao revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy
AT qihuanggong revealinglowlossdielectricnearfieldmodesofhexagonalboronnitridebyphotoemissionelectronmicroscopy