Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction
In this study, we compare the real-time oxygen (O) precipitation kinetics of heavily germanium (Ge)-doped Czochralski-silicon (Cz-Si) at 900 °C—under different pre-annealing conditions—with those of undoped Cz-Si. We follow in situ the evolution of the Bragg intensity in Laue transmission geometry a...
| Autori principali: | , , |
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| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
AIP Publishing LLC
2020-10-01
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| Serie: | AIP Advances |
| Accesso online: | http://dx.doi.org/10.1063/5.0027232 |