Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction

Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction

In this study, we compare the real-time oxygen (O) precipitation kinetics of heavily germanium (Ge)-doped Czochralski-silicon (Cz-Si) at 900 °C—under different pre-annealing conditions—with those of undoped Cz-Si. We follow in situ the evolution of the Bragg intensity in Laue transmission geometry a...

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Bibliographic Details
Main Authors: Zhen Li, Johannes Will, Deren Yang
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0027232

Internet

http://dx.doi.org/10.1063/5.0027232

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