An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements

An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements

In this paper, we propose an improved method for extracting the four noise parameters of InP HEMT devices based on a 50-<inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> noise measurement system. The noise equivalent circuit and nois...

Full description

Bibliographic Details
Main Authors: Yuanting Lyu, Zhichun Li, Ao Zhang, Jianjun Gao
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Device modeling
HEMTs
correlation noise matrix
noise parameters
noise measurement
Online Access:https://ieeexplore.ieee.org/document/10418161/

Internet

https://ieeexplore.ieee.org/document/10418161/

Similar Items