Interfacial Properties of Anisotropic Monolayer SiAs Transistors

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively stu...

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Bibliographic Details
Main Authors: Feihu Zou, Yao Cong, Weiqi Song, Haosong Liu, Yanan Li, Yifan Zhu, Yue Zhao, Yuanyuan Pan, Qiang Li
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
monolayer SiAs
Schottky contact
Ohmic contact
transistors
Online Access:https://www.mdpi.com/2079-4991/14/3/238

Internet

https://www.mdpi.com/2079-4991/14/3/238

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