In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing t...

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Bibliographic Details
Main Authors: Naomi Mizuno, Fernando Camino, Xu Du
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Nanomaterials
Subjects:
graphene devices
e-beam damage
e-beam lithography
aberration corrected
Online Access:https://www.mdpi.com/2079-4991/10/4/666

Internet

https://www.mdpi.com/2079-4991/10/4/666

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