Self-Assembled Monolayers (SAMs)/Al<sub>2</sub>O<sub>3</sub> Double Layer Passivated InSnZnO Thin-Film Transistor

Self-Assembled Monolayers (SAMs)/Al<sub>2</sub>O<sub>3</sub> Double Layer Passivated InSnZnO Thin-Film Transistor

We fabricated high-performance InSnZnO (ITZO) thin-film transistors (TFTs) with self-assembled monolayers (SAMs)/Al<sub>2</sub>O<sub>3</sub> double passivation layers (PVLs). The presented SAMs/Al<sub>2</sub>O<sub>3</sub> double passivation leads to hi...

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Bibliographic Details
Main Authors: Wei Zhong, Ruohe Yao, Zhijian Chen, Linfeng Lan, Rongsheng Chen
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
InSnZnO
thin-film transistors
self-assembled monolayers
double passivation
stability
Online Access:https://ieeexplore.ieee.org/document/9102271/

Internet

https://ieeexplore.ieee.org/document/9102271/

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