Electron and Hole Mobility of SnO<sub>2</sub> from Full-Band Electron–Phonon and Ionized Impurity Scattering Computations

Electron and Hole Mobility of SnO<sub>2</sub> from Full-Band Electron–Phonon and Ionized Impurity Scattering Computations

Mobility is a key parameter for SnO<sub>2</sub>, which is extensively studied as a practical transparent oxide <i>n</i>-type semiconductor. In experiments, the mobility of electrons in bulk SnO<sub>2</sub> single crystals varies from 70 to 260 cm<sup>2</s...

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Bibliographic Details
Main Authors: Zhen Li, Patrizio Graziosi, Neophytos Neophytou
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Crystals
Subjects:
tin oxide
Boltzmann transport equation
density functional theory
Online Access:https://www.mdpi.com/2073-4352/12/11/1591

Internet

https://www.mdpi.com/2073-4352/12/11/1591

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