Electron and Hole Mobility of SnO<sub>2</sub> from Full-Band Electron–Phonon and Ionized Impurity Scattering Computations
Mobility is a key parameter for SnO<sub>2</sub>, which is extensively studied as a practical transparent oxide <i>n</i>-type semiconductor. In experiments, the mobility of electrons in bulk SnO<sub>2</sub> single crystals varies from 70 to 260 cm<sup>2</s...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-11-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/12/11/1591 |