Stress Engineering With Silicon Nitride Stressors for Ge-on-Si Lasers
Side and top silicon nitride stressors were proposed and shown to be effective in reducing the threshold current I<sub>th</sub> and in improving the wall-plug efficiency η<sub>wp</sub> of Ge-on-Si lasers. Side stressors only turned out to be a more efficient way to...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7866834/ |