The Structural and Optical Properties of Hydrogenated and Nitrogenated a-Si0.1Ge0.9 and a-Si0.1Ge0.9:3% B Thin Films
It is shown that pure and 3% boron doped a-Si0.1Ge0.9:H and a-Si0.1Ge0.9:N thin films could be prepared by flash evaporation processes. The hydrogenation and nitrogenation are very successful in situ after depositing the films. The FT-IR analysis gave all the known absorbing bonds of hydrogen and n...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2009-10-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/899 |