Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization

Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization

We present a device concept for magnetoresistance (MR) effect in which two Van der Waals (vdW) spin valves are used as the left and right ferromagnetic (FM) leads connected by a bilayer graphene as the channel material of the central scattering region. Unlike conventional current-perpendicular-to-pl...

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Bibliographic Details
Main Authors: Xiuqiang Wu, Hao Meng, Haiyang Zhang, Ning Xu
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:New Journal of Physics
Subjects:
magnetoresistance
bilayer graphene
spin valves
magnetic tunnel junctions
Van der Waals systems
Landauer formula
Online Access:https://doi.org/10.1088/1367-2630/ac1143

Internet

https://doi.org/10.1088/1367-2630/ac1143

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