Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization
We present a device concept for magnetoresistance (MR) effect in which two Van der Waals (vdW) spin valves are used as the left and right ferromagnetic (FM) leads connected by a bilayer graphene as the channel material of the central scattering region. Unlike conventional current-perpendicular-to-pl...
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| Format: | Article |
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IOP Publishing
2021-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/ac1143 |
| _version_ | 1797750148797825024 |
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| author | Xiuqiang Wu Hao Meng Haiyang Zhang Ning Xu |
| author_facet | Xiuqiang Wu Hao Meng Haiyang Zhang Ning Xu |
| author_sort | Xiuqiang Wu |
| collection | DOAJ |
| description | We present a device concept for magnetoresistance (MR) effect in which two Van der Waals (vdW) spin valves are used as the left and right ferromagnetic (FM) leads connected by a bilayer graphene as the channel material of the central scattering region. Unlike conventional current-perpendicular-to-plane magnetic tunnel junction consisting of two FM thin films with a thin insulating barrier sandwiched between them, the FM leads in our proposed current-in-plane MR device are vdW spin valves. This is important because the application of an out-of-plane electric field allows control of the direction and magnitude of the magnetization in vdW spin valves. Moreover, we show that the oscillatory behavior is found in the MR and conductance as the height (depth) of the barrier (well) of the scattering region with the p ( n )-doping increase, or the width of the scattering region increase. Remarkably, when the potential barrier is present, the oscillation magnitude of MR is considerable and can be changed from positive to negative value, whereas for the potential well, the oscillation amplitude is relatively small and is always positive. Therefore, we hope that this device configuration with electrically tunable large MR can open up new possibilities for future lower power magneto-electric devices since no current-induced magnetization switching. |
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| id | doaj.art-7949bb55d1af48f5a7db765c819be6e8 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:28:31Z |
| publishDate | 2021-01-01 |
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| series | New Journal of Physics |
| spelling | doaj.art-7949bb55d1af48f5a7db765c819be6e82023-08-08T15:36:44ZengIOP PublishingNew Journal of Physics1367-26302021-01-01231010300710.1088/1367-2630/ac1143Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetizationXiuqiang Wu0https://orcid.org/0000-0003-0690-0651Hao Meng1Haiyang Zhang2https://orcid.org/0000-0002-9719-4264Ning Xu3Department of Physics, Yancheng Institute of Technology , Yancheng, 224051, People’s Republic of ChinaSchool of Physics and Telecommunication Engineering, Shaanxi University of Technology-Hanzhong , 723001, People’s Republic of ChinaDepartment of Physics, Yancheng Institute of Technology , Yancheng, 224051, People’s Republic of ChinaDepartment of Physics, Yancheng Institute of Technology , Yancheng, 224051, People’s Republic of ChinaWe present a device concept for magnetoresistance (MR) effect in which two Van der Waals (vdW) spin valves are used as the left and right ferromagnetic (FM) leads connected by a bilayer graphene as the channel material of the central scattering region. Unlike conventional current-perpendicular-to-plane magnetic tunnel junction consisting of two FM thin films with a thin insulating barrier sandwiched between them, the FM leads in our proposed current-in-plane MR device are vdW spin valves. This is important because the application of an out-of-plane electric field allows control of the direction and magnitude of the magnetization in vdW spin valves. Moreover, we show that the oscillatory behavior is found in the MR and conductance as the height (depth) of the barrier (well) of the scattering region with the p ( n )-doping increase, or the width of the scattering region increase. Remarkably, when the potential barrier is present, the oscillation magnitude of MR is considerable and can be changed from positive to negative value, whereas for the potential well, the oscillation amplitude is relatively small and is always positive. Therefore, we hope that this device configuration with electrically tunable large MR can open up new possibilities for future lower power magneto-electric devices since no current-induced magnetization switching.https://doi.org/10.1088/1367-2630/ac1143magnetoresistancebilayer graphenespin valvesmagnetic tunnel junctionsVan der Waals systemsLandauer formula |
| spellingShingle | Xiuqiang Wu Hao Meng Haiyang Zhang Ning Xu Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization New Journal of Physics magnetoresistance bilayer graphene spin valves magnetic tunnel junctions Van der Waals systems Landauer formula |
| title | Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization |
| title_full | Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization |
| title_fullStr | Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization |
| title_full_unstemmed | Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization |
| title_short | Magnetoresistance effect realized in current-in-plane Van der Waals spin valve structure by electrically switchable magnetization |
| title_sort | magnetoresistance effect realized in current in plane van der waals spin valve structure by electrically switchable magnetization |
| topic | magnetoresistance bilayer graphene spin valves magnetic tunnel junctions Van der Waals systems Landauer formula |
| url | https://doi.org/10.1088/1367-2630/ac1143 |
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