Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out un...

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Bibliographic Details
Main Authors: Linglong Zeng, Langning Wang, Xinyue Niu, Fuyin Liu, Ting He, Yanran Gu, Muyu Yi, Jinmei Yao, Tao Xun, Hanwu Yang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Photoconductive semiconductor switch
silicon carbide
gallium nitride
breakdown
photoelectric conversion efficiency
output power
Online Access:https://ieeexplore.ieee.org/document/10458869/

Internet

https://ieeexplore.ieee.org/document/10458869/

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