Semipolar {<inline-formula><math display="inline"><semantics><mrow><mn>20</mn><mover><mn>2</mn><mo>¯</mo></mover><mn>1</mn></mrow></semantics></math></inline-formula>} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Semipolar {<inline-formula><math display="inline"><semantics><mrow><mn>20</mn><mover><mn>2</mn><mo>¯</mo></mover><mn>1</mn></mrow></semantics></math></inline-formula>} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>20</mn&...

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Bibliographic Details
Main Authors: Srinivas Gandrothula, Haojun Zhang, Pavel Shapturenka, Ryan Anderson, Matthew S. Wong, Hongjian Li, Takeshi Kamikawa, Shuji Nakamura, Steven P. DenBaars
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Crystals
Subjects:
GaN
semipolar
{20<span style="text-decoration: overline">2</span>1}
epitaxial lateral overgrowth
laser diode
defects
Online Access:https://www.mdpi.com/2073-4352/11/12/1563

Internet

https://www.mdpi.com/2073-4352/11/12/1563

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