Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs

Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs

Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties. However, the lack of effective n-type dopants in diamond has limited the material to only unipolar p-type device applica...

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Bibliographic Details
Main Authors: Sang June Cho, Dong Liu, Aaron Hardy, Jisoo Kim, Jiarui Gong, Cristian J. Herrera-Rodriguez, Edward Swinnich, Xenofon Konstantinou, Geum-Yoon Oh, Doo Gun Kim, Jae Cheol Shin, John Papapolymerou, Michael Becker, Jung-Hun Seo, John D. Albrecht, Timothy A. Grotjohn, Zhenqiang Ma
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0027864

Internet

http://dx.doi.org/10.1063/5.0027864

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