Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs

Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs

Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties. However, the lack of effective n-type dopants in diamond has limited the material to only unipolar p-type device applica...

Full description

Bibliographic Details
Main Authors:	Sang June Cho, Dong Liu, Aaron Hardy, Jisoo Kim, Jiarui Gong, Cristian J. Herrera-Rodriguez, Edward Swinnich, Xenofon Konstantinou, Geum-Yoon Oh, Doo Gun Kim, Jae Cheol Shin, John Papapolymerou, Michael Becker, Jung-Hun Seo, John D. Albrecht, Timothy A. Grotjohn, Zhenqiang Ma
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0027864

Similar Items

Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
by: Wang, Hong
Published: (2009)

Linearity of power AlGaAs/GaAs HBTs
by: Chatterjee, Ritwik, 1974-
Published: (2009)

Simulations of AlGaAs/GaAs heterojunction phototransistors
by: Ściana Beata, et al.
Published: (2011-08-01)

Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
by: Priest, A, et al.
Published: (1998)

Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T
by: Priest, A, et al.
Published: (1998)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
by: Yao Wu, et al.
Published: (2018-04-01)

Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor
by: Azmi, S. N. C., et al.
Published: (2016)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
by: Maxim A. Ladugin, et al.
Published: (2019-06-01)

In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
by: Fitzgerald, Eugene A
Published: (2020)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
by: Smith, L, et al.
Published: (2007)

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes
by: Kontrosh Evgeniy, et al.
Published: (2023-12-01)

GaAs/AlGaAs far-infrared quantum cascade laser
by: Callebaut, Hans, 1975-
Published: (2009)

GaAs/AlGaAs mid-infrared quantum cascade laser
by: Williams, Benjamin S. (Benjamin Stanford), 1974-
Published: (2009)

Modeling of the growth of GaAs–AlGaAs core–shell nanowires
by: Qian Zhang, et al.
Published: (2017-02-01)

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
by: Yuan, S, et al.
Published: (1998)

Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping
by: John A. Gil-Corrales, et al.
Published: (2023-03-01)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
by: Joyce, H, et al.
Published: (2007)

TEM study of compositional profile in AlGaAs/GaAs quantum wells
by: Zou, J, et al.
Published: (1998)

Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
by: Ahlam H. Jaffer, et al.
Published: (2014-02-01)

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
by: Natalia Vetrova, et al.
Published: (2023-09-01)

Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
by: Matthew Gorfien, et al.
Published: (2020-03-01)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
by: Kang, J, et al.
Published: (2011)

Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings
by: Jang, J, et al.
Published: (2020)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
by: Titova, L, et al.
Published: (2006)

In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations
by: Wang, Yue, et al.
Published: (2019)

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
by: Yue Wang, et al.
Published: (2018-11-01)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
by: Jiang, N, et al.
Published: (2013)

Improved GaAs nanowire solar cells using AlGaAs for surface passivation
by: Lee, Y, et al.
Published: (2012)

Phonon spectral density in a GaAs/AlGaAs double quantum dot
by: A. Hofmann, et al.
Published: (2020-08-01)

A Theoretical Study of the Dynamical Behavior of SQW GaAs/AlGaAs Laser
by: Azhar I. Hassan
Published: (2010-10-01)

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
by: Tian Haitao, et al.
Published: (2011-01-01)

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
by: Yves Mols, et al.
Published: (2021-09-01)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
by: Shafi M, et al.
Published: (2010-01-01)

Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
by: Yang, Hong
Published: (2008)

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
by: Lei, W, et al.
Published: (2012)

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
by: Ryan, J, et al.
Published: (1984)

Dual wavelength optical duobinary modulation using GaAs–AlGaAs microring resonator
by: Amiri, Iraj Sadegh, et al.
Published: (2018)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
by: Parimon, Norfarariyanti, et al.
Published: (2008)

Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application
by: Parimon, Norfarariyanti, et al.
Published: (2010)