Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall

In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field...

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Bibliographic Details
Main Authors: Xinke Liu, Bo Li, Junye Wu, Jian Li, Wen Yue, Renqiang Zhu, Qi Wang, Xiaohua Li, Jianwei Ben, Wei He, Hsien-Chin Chiu, Ke Xu, Ze Zhong
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
diodes
slanted sidewall
high breakdown voltage
Online Access:https://ieeexplore.ieee.org/document/10347449/

Internet

https://ieeexplore.ieee.org/document/10347449/

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