Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10347449/ |
| _version_ | 1827368471011262464 |
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| author | Xinke Liu Bo Li Junye Wu Jian Li Wen Yue Renqiang Zhu Qi Wang Xiaohua Li Jianwei Ben Wei He Hsien-Chin Chiu Ke Xu Ze Zhong |
| author_facet | Xinke Liu Bo Li Junye Wu Jian Li Wen Yue Renqiang Zhu Qi Wang Xiaohua Li Jianwei Ben Wei He Hsien-Chin Chiu Ke Xu Ze Zhong |
| author_sort | Xinke Liu |
| collection | DOAJ |
| description | In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> of 2 kV and an on-state resistance <inline-formula> <tex-math notation="LaTeX">$R_{on}$ </tex-math></inline-formula> of 1.34 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \bullet $ </tex-math></inline-formula>cm2, the devices fabricated in this work achieved the highest power device figure-of-merit <inline-formula> <tex-math notation="LaTeX">$V_{BR}^{2}/R_{on}$ </tex-math></inline-formula> of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications. |
| first_indexed | 2024-03-08T09:31:56Z |
| format | Article |
| id | doaj.art-79609d040551497caca4c2378ca79524 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T09:31:56Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-79609d040551497caca4c2378ca795242024-01-31T00:00:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-0112343810.1109/JEDS.2023.334051210347449Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted SidewallXinke Liu0https://orcid.org/0000-0002-5367-6923Bo Li1Junye Wu2https://orcid.org/0000-0002-5015-0221Jian Li3https://orcid.org/0000-0003-0838-9164Wen Yue4Renqiang Zhu5https://orcid.org/0000-0002-2456-2855Qi Wang6https://orcid.org/0000-0001-7129-1974Xiaohua Li7Jianwei Ben8Wei He9https://orcid.org/0000-0001-9759-5052Hsien-Chin Chiu10https://orcid.org/0000-0003-1068-5798Ke Xu11Ze Zhong12College of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaShenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, ChinaDongguan Institute of Opto-Electronics, Peking University, Dongguan, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaDepartment of Electronic Engineering, Chang Gung University, Taoyuan, TaiwanSuzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaIn this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> of 2 kV and an on-state resistance <inline-formula> <tex-math notation="LaTeX">$R_{on}$ </tex-math></inline-formula> of 1.34 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \bullet $ </tex-math></inline-formula>cm2, the devices fabricated in this work achieved the highest power device figure-of-merit <inline-formula> <tex-math notation="LaTeX">$V_{BR}^{2}/R_{on}$ </tex-math></inline-formula> of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.https://ieeexplore.ieee.org/document/10347449/diodesslanted sidewallhigh breakdown voltage |
| spellingShingle | Xinke Liu Bo Li Junye Wu Jian Li Wen Yue Renqiang Zhu Qi Wang Xiaohua Li Jianwei Ben Wei He Hsien-Chin Chiu Ke Xu Ze Zhong Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall IEEE Journal of the Electron Devices Society diodes slanted sidewall high breakdown voltage |
| title | Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall |
| title_full | Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall |
| title_fullStr | Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall |
| title_full_unstemmed | Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall |
| title_short | Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall |
| title_sort | vertical gan on gan trench junction barrier schottky diodes with a slanted sidewall |
| topic | diodes slanted sidewall high breakdown voltage |
| url | https://ieeexplore.ieee.org/document/10347449/ |
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