Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications
The AI and IoT era requires software and hardware capable of efficiently processing massive amounts data quickly and at a low cost. However, there are bottlenecks in existing Von Neumann structures, including the difference in the operating speed of current-generation DRAM and Flash memory systems,...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/10/2297 |